1. Crystallography and Product Fundamentals of Silicon Carbide

1.1 Polymorphism and Atomic Bonding in SiC


(Silicon Carbide Ceramic Plates)

Silicon carbide (SiC) is a covalent ceramic compound composed of silicon and carbon atoms in a 1:1 stoichiometric proportion, identified by its amazing polymorphism– over 250 known polytypes– all sharing solid directional covalent bonds however differing in piling sequences of Si-C bilayers.

One of the most technically relevant polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal forms 4H-SiC and 6H-SiC, each displaying refined variations in bandgap, electron movement, and thermal conductivity that affect their viability for specific applications.

The toughness of the Si– C bond, with a bond energy of about 318 kJ/mol, underpins SiC’s phenomenal hardness (Mohs hardness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical degradation and thermal shock.

In ceramic plates, the polytype is generally selected based on the meant usage: 6H-SiC prevails in architectural applications because of its simplicity of synthesis, while 4H-SiC dominates in high-power electronics for its premium fee carrier wheelchair.

The broad bandgap (2.9– 3.3 eV relying on polytype) also makes SiC an outstanding electrical insulator in its pure kind, though it can be doped to work as a semiconductor in specialized electronic gadgets.

1.2 Microstructure and Phase Purity in Ceramic Plates

The efficiency of silicon carbide ceramic plates is critically based on microstructural functions such as grain size, density, phase homogeneity, and the presence of second stages or impurities.

High-grade plates are typically fabricated from submicron or nanoscale SiC powders via innovative sintering techniques, resulting in fine-grained, fully dense microstructures that make best use of mechanical toughness and thermal conductivity.

Impurities such as cost-free carbon, silica (SiO TWO), or sintering help like boron or aluminum need to be meticulously controlled, as they can create intergranular films that reduce high-temperature strength and oxidation resistance.

Residual porosity, even at reduced degrees (

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